Porous III-Vs

Porous III-V Semiconductors by I. Tiginyanu, S. Langa, H. Föll and V. Ursachi

1.1 Short history 1.2.1 N-type macropores in Si 1.2.2 P-type macropores in Si

2.1 The basics of Solids and Solutions 2.1.1 The Solid 2.1.2 Electrolyte Solutions 2.2 The Schottky Barrier 2.3 Solid-electrolyte interface models 2.4 Influence of Redox Couples on the Fermi Energy 2.5.1 Space Charge Layer in Semiconductors 2.5.2 Helmholtz and Gouy Layers in Electrolyte Solutions 2.5.3 Electrochemical Cells and Potentiostats

3.1 Why Porous III-Vs 3.2.1 Anisotropy of III-Vs 3.2.2 Chemical dissolution 3.2.3 Electrochemical Etching 3.2.4 IV Characteristics 3.2.5 CB-Model and III-Vs 3.3.1 Crysto- pores 3.3.2 Curro-pores 3.3.3 Domains of Crysto-pores 3.3.4 Tetrahedron-like Pores 3.4.1 Voltage Oscillations 3.4.2 Voltage Oscillations in pore formation regime 3.4.3 T and j Dependence of the Oscillating Frequency 3.5.1 CB-Model and Voltage Oscillations 3.5.2 Self-organized single-crystalline porous structures 3.6 Towards Uniform 3D Structures

4.1.1 CL of Porous III-V Layers 4.1.2 Correlation between Morphology and CL in Porous GaP 4.1.3 Porosity-Induced Spatial Modulation of the CL in InP 4.2 Nonlinear optical effects 4.3 THz emission from porous InP 4.4 Phonon spectra of porous GaP structures 4.5.1 Phonon spectrum of bulk GaAs 4.5.2 Raman spectrum of porous GaAs

5.1 Photonic crystal structures 5.2 Micro lenses 5.3 Integrated Waveguide Structures Based on Porous InP

6.1 Porous Germanium 6.2 Electrochemically etched GaN

Appendix 1 Appendix 2 Appendix 3 Appendix 4 Appendix 5

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Chapter 1

Chapter 2

Chapter 3

3.1 Why Porous III-Vs

3.2.1 Anisotropy of III-Vs

3.2.2 Chemical dissolution

3.2.3 Electrochemical Etching

3.2.4 IV Characteristics

3.2.5 CB-Model and III-Vs

3.3.1 Crysto- pores

3.3.2 Curro-pores

3.3.3 Domains of Crysto-pores

3.3.4 Tetrahedron-like Pores

3.4.1 Voltage Oscillations

3.4.2 Voltage Oscillations in pore formation regime

3.4.3 T and j Dependence of the Oscillating Frequency

3.5.1 CB-Model and Voltage Oscillations

3.5.2 Self-organized single-crystalline porous structures

3.6 Towards Uniform 3D Structures

Chapter 4

Chapter 5

Chapter 6

Appendixes

Papers

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Last Updated on
2009-10-08

> Why Porous III-V Materials and What are the Challenges? > Anisotropy of III-V Compounds > Chemical dissolution > Electrochemical Etching > Current Voltage Characteristics > Current Burst Model and III-V Compounds > Crystallographically oriented pores > Current-line Oriented Pores > Domains of Crystallographically Oriented Pores in GaAs > Tetrahedron-like Pores in (100)-oriented GaAs > Voltage Oscillations at Semiconductor Electrodes > Observation of Voltage Oscillations in pore formation regime > Temperature and Current Density Dependence of the Oscillating Frequency > Current Burst Model and Voltage Oscillations > Self-organized single-crystalline porous structures > Towards Uniform 3D Structures in GaAs

A collage of the first 2.5D single pore crystal obtained by self-organization.

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