Oscillations in chemical and electrochemical systems represent phenomena observed relatively often . Concerning semiconductor electrodes, the most well known oscillations are the current/voltage oscillations occurring during the electropolishing of Si . The main explanation accepted by the scientific community is that oscillations at Si electrodes are related to a periodic process of oxide generation followed by dissolution. However, how exactly does this periodic process occur in reality is still under discussion.
According to the current burst model, the macroscopic oscillations in the electropolishing regime can be treated as a self-organized process of some local oscillators, i.e. current bursts. Taking into account that pore formation can be considered a particular case of electropolishing, i.e. local electropolishing only at pore tips, the current burst model predicted that material dissolution at pore tips occurs also in an oscillating fashion. InP was the first semiconductor where oscillations in the pore formation regime were observed experimentally .